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- W2017515688 abstract "Abstract Single-crystalline ZnO films have been grown on a -plane sapphire in plasma assisted molecular beam epitaxy by introducing a high-temperature ZnO buffer layer. The residual electron concentration of the films can be lowered to 1.5×10 16 cm −3 , comparable with the best value ever reported for ZnO films grown on a rare and costly substrate of ScAlMgO 4 . A 3×3 reconstruction has been observed on the films grown in this route, which reveals that the films have very smooth surface. X-ray phi-scan spectrum of the films shows six peaks with 60° intervals, and two-dimensional X-ray diffraction datum indicates the single-crystalline nature of the films. Low temperature photoluminescence spectrum of the films shows a dominant free exciton emission and five phonon replicas, confirming the high quality of the films." @default.
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- W2017515688 date "2010-10-01" @default.
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- W2017515688 title "A route to single-crystalline ZnO films with low residual electron concentration" @default.
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- W2017515688 doi "https://doi.org/10.1016/j.jcrysgro.2010.07.006" @default.
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