FRINK Linked Data Fragments server

Matches in SemOpenAlex for { <https://semopenalex.org/work/W2017521109> ?p ?o ?g. }

• W2017521109 endingPage "363" @default.
• W2017521109 startingPage "358" @default.
• W2017521109 abstract "This study demonstrates improvement of crystal quality of GaN film by growing it on a micro-faceted GaN template fabricated by in situ etching with an HCl/N2 etching gas mixture at 1050 °C in hydride vapor phase epitaxy (HVPE) reactor. Cathodoluminescence images of the cross-sectional structure showed that there were six sublays in the GaN film grown with in situ etching for five times. Etch pit density (EPD) and high-resolution X-ray diffraction (HR-XRD) measurements showed that the crystal quality of GaN thick film grown on micro-faceted GaN template was better than that of the as-grown GaN. A large number of columnar structures were formed on the micro-faceted GaN template at the initial stage of regrowth process, the coalescence of which played an important role in the reduction of threading dislocation density during the GaN growth. A model has been developed to explain the mechanism of forming process of the columnar structures." @default.
• W2017521109 created "2016-06-24" @default.
• W2017521109 creator A5014697169 @default.
• W2017521109 creator A5024825186 @default.
• W2017521109 creator A5064564309 @default.
• W2017521109 creator A5066312807 @default.
• W2017521109 creator A5071009883 @default.
• W2017521109 creator A5073733832 @default.
• W2017521109 creator A5075978121 @default.
• W2017521109 date "2013-12-01" @default.
• W2017521109 modified "2023-10-14" @default.
• W2017521109 title "A study of GaN regrowth on the micro-faceted GaN template formed by in situ HCl etching" @default.
• W2017521109 cites W1971460701 @default.
• W2017521109 cites W1977446569 @default.
• W2017521109 cites W1979507427 @default.
• W2017521109 cites W1980943784 @default.
• W2017521109 cites W1981784000 @default.
• W2017521109 cites W1986595599 @default.
• W2017521109 cites W1991988352 @default.
• W2017521109 cites W2003760958 @default.
• W2017521109 cites W2007930532 @default.
• W2017521109 cites W2009686535 @default.
• W2017521109 cites W2024153308 @default.
• W2017521109 cites W2031378172 @default.
• W2017521109 cites W2035593501 @default.
• W2017521109 cites W2050487076 @default.
• W2017521109 cites W2056948894 @default.
• W2017521109 cites W2067970979 @default.
• W2017521109 cites W2072969029 @default.
• W2017521109 cites W2074249148 @default.
• W2017521109 cites W2090666192 @default.
• W2017521109 cites W2125864840 @default.
• W2017521109 cites W2142362296 @default.
• W2017521109 cites W2147645054 @default.
• W2017521109 cites W2167779922 @default.
• W2017521109 doi "https://doi.org/10.1016/j.apsusc.2013.09.090" @default.
• W2017521109 hasPublicationYear "2013" @default.
• W2017521109 type Work @default.
• W2017521109 sameAs 2017521109 @default.
• W2017521109 citedByCount "10" @default.
• W2017521109 countsByYear W20175211092017 @default.
• W2017521109 countsByYear W20175211092018 @default.
• W2017521109 countsByYear W20175211092020 @default.
• W2017521109 countsByYear W20175211092021 @default.
• W2017521109 countsByYear W20175211092022 @default.
• W2017521109 crossrefType "journal-article" @default.
• W2017521109 hasAuthorship W2017521109A5014697169 @default.
• W2017521109 hasAuthorship W2017521109A5024825186 @default.
• W2017521109 hasAuthorship W2017521109A5064564309 @default.
• W2017521109 hasAuthorship W2017521109A5066312807 @default.
• W2017521109 hasAuthorship W2017521109A5071009883 @default.
• W2017521109 hasAuthorship W2017521109A5073733832 @default.
• W2017521109 hasAuthorship W2017521109A5075978121 @default.
• W2017521109 hasConcept C100460472 @default.
• W2017521109 hasConcept C110738630 @default.
• W2017521109 hasConcept C121332964 @default.
• W2017521109 hasConcept C139861200 @default.
• W2017521109 hasConcept C148869448 @default.
• W2017521109 hasConcept C149792144 @default.
• W2017521109 hasConcept C159122135 @default.
• W2017521109 hasConcept C159985019 @default.
• W2017521109 hasConcept C171250308 @default.
• W2017521109 hasConcept C178790620 @default.
• W2017521109 hasConcept C185592680 @default.
• W2017521109 hasConcept C192562407 @default.
• W2017521109 hasConcept C2777822432 @default.
• W2017521109 hasConcept C2779227376 @default.
• W2017521109 hasConcept C49040817 @default.
• W2017521109 hasConcept C8010536 @default.
• W2017521109 hasConcept C81626474 @default.
• W2017521109 hasConcept C87355193 @default.
• W2017521109 hasConceptScore W2017521109C100460472 @default.
• W2017521109 hasConceptScore W2017521109C110738630 @default.
• W2017521109 hasConceptScore W2017521109C121332964 @default.
• W2017521109 hasConceptScore W2017521109C139861200 @default.
• W2017521109 hasConceptScore W2017521109C148869448 @default.
• W2017521109 hasConceptScore W2017521109C149792144 @default.
• W2017521109 hasConceptScore W2017521109C159122135 @default.
• W2017521109 hasConceptScore W2017521109C159985019 @default.
• W2017521109 hasConceptScore W2017521109C171250308 @default.
• W2017521109 hasConceptScore W2017521109C178790620 @default.
• W2017521109 hasConceptScore W2017521109C185592680 @default.
• W2017521109 hasConceptScore W2017521109C192562407 @default.
• W2017521109 hasConceptScore W2017521109C2777822432 @default.
• W2017521109 hasConceptScore W2017521109C2779227376 @default.
• W2017521109 hasConceptScore W2017521109C49040817 @default.
• W2017521109 hasConceptScore W2017521109C8010536 @default.
• W2017521109 hasConceptScore W2017521109C81626474 @default.
• W2017521109 hasConceptScore W2017521109C87355193 @default.
• W2017521109 hasFunder F4320321001 @default.
• W2017521109 hasLocation W20175211091 @default.
• W2017521109 hasOpenAccess W2017521109 @default.
• W2017521109 hasPrimaryLocation W20175211091 @default.
• W2017521109 hasRelatedWork W1977446569 @default.
• W2017521109 hasRelatedWork W1986586379 @default.
• W2017521109 hasRelatedWork W2002511517 @default.
• W2017521109 hasRelatedWork W2003777234 @default.
• W2017521109 hasRelatedWork W2053357520 @default.

• next