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• W2017560666 abstract "Hydrogen termination of silicon dangling bonds is a useful method in large-scale integrated circuit (LSI) technology. In the present study, a two-dimensional (2D) hydrogen analyzer has been developed using an electron-stimulated desorption (ESD) method. A result of 2D hydrogen analysis revealed a spatial resolution of 700 nm under the optimal condition. Hydrogen termination has been applied to heteroepitaxial growth of a Ni-silicide system on the H-terminated Si(100) surface using a scanning tunneling microscope (STM). The H-terminated surface formed a sharp interface between the silicide and the substrate." @default.
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• W2017560666 date "2000-06-01" @default.
• W2017560666 modified "2023-09-25" @default.
• W2017560666 title "Two-dimensional hydrogen distribution on solid surfaces studied by electron-stimulated desorption microscopy and Ni-silicides on H-terminated Si(100) surfaces" @default.
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• W2017560666 doi "https://doi.org/10.1016/s0169-4332(00)00072-6" @default.
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