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• W2017587788 abstract "The impact of a submonolayer of HfO2 sandwiched between the SiON gate dielectric and the polycrystalline silicon layer on the low frequency noise of a n-channel metal oxide semiconductor field effect transistor is investigated. Fermi-level pinning at polycrystalline silicon-HfO2 interface acts as a dramatic source of the drain noise due to charge carrier number fluctuations, and of the gate noise due to work function fluctuations. These 1∕f noise measurements are a strong indicator that the defects at the top HfO2/polycrystalline silicon interface, rather than bulk defects in the high-k layer, are responsible for the noise degradation observed in HfO2 gate dielectrics." @default.
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• W2017587788 date "2007-02-12" @default.
• W2017587788 modified "2023-09-30" @default.
• W2017587788 title "Fermi-level pinning at polycrystalline silicon-HfO2 interface as a source of drain and gate current 1∕f noise" @default.
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• W2017587788 doi "https://doi.org/10.1063/1.2472716" @default.
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