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- W2017625922 abstract "Abstract In the last several years focused ion beam (FIB) systems have become available. The key features of these systems include small spot size ( 0.1 A cm 2 on target), ion species which are suitable for the doping of semiconductor materials, and interfacing with appropriate components to enable micropatteming and imaging of surfaces. These attributes combined with the continuing requirements in microelectronics for finer resolution and registration as well as precise dopant distribution control have generated considerable interest in FIB technology. Potential applications in the semiconductor industry include: (1) lithography (scanned beam and through mask) and mask repair; (2) micro-milling of dielectrics and conductors; (3) ion microprobes for high resolution and imaging secondary ion mass analysis and for ion microscopy; and (4) direct implantation of dopants for device fabrication. The paper will consider these potential applications with emphasis on implantation. The strength and weakness of the FIB approach relative to alternative methods will be discussed." @default.
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- W2017625922 title "Potential applications of focused ion beam technology for the semiconductor industry" @default.
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- W2017625922 doi "https://doi.org/10.1016/0168-583x(85)90299-x" @default.
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