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- W2017661954 abstract "Abstract Three different all nitrogen‐coordinated heteroleptic precursors, [Ta(NEtMe) 3 (N‐ t Bu)] ( 1 ), [Ta(NEtMe)( N ‐ t Bu){C(N‐ i Pr) 2 ‐(NEtMe)} 2 ] ( 2 ), and [Ta(NMeEt) 2 (N‐ t Bu)(tdmh)] ( 3 ) (Et = ethyl, Me = methyl, t Bu = tert ‐butyl, i Pr = iso propyl, tdmh = N ‐trimethylsilyl‐ N ′, N ′‐dimethylhydrazine) are tested in thermally activated metal–organic (MO)CVD of TaN thin films. Using 1 and 2 , conducting cubic‐TaN films can be deposited ( 1 : 4000 μΩ·cm; 2 : 10000–20000 μΩ·cm), while 3 results in the formation of insulating silicon‐containing films with high levels of oxygen impurities. Raising the chemical complexity of precursors 2 and 3 with respect to 1 does not necessarily lead to high carbon incorporation, even in the absence of additional ammonia. Metal–insulator–semiconductor structures with TaN as the metal gate material are fabricated and characterized by capacitance–voltage ( C – V ) and current density–voltage ( J – V ) measurements. Precursor 3 is used to deposit insulating TaSiN(O) films in a large‐scale reactor on 150 mm prestructured metal oxide semiconductor (MOS) wafers." @default.
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- W2017661954 date "2007-03-01" @default.
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- W2017661954 title "MOCVD of TaN Using the All-Nitrogen-Coordinated Precursors [Ta(NEtMe)3(N-tBu)], [Ta(NEtMe)(N-tBu){C(N-iPr)2(NEtMe)}2], and [Ta(NMeEt)2(N-tBu){Me2N-N(SiMe3)}]" @default.
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- W2017661954 doi "https://doi.org/10.1002/cvde.200606514" @default.
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