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- W2017709166 abstract "GaAs reflection photocathodes grown by vapor-phase epitaxy using trimethyl gallium and arsine have been activated to a maximum sensitivity of 1150 μA 1m−1. The material is of high quality and has diffusion lengths and surface escape probabilities which are comparable with those measured for liquid-phase epitaxial material." @default.
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- W2017709166 title "GaAs reflection photocathodes grown by metal alkyl vapor phase epitaxy" @default.
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