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• W2017725825 abstract "This paper presents the effects of postdeposition annealing temperatures (400, 600, 800, and 1000°C) in oxygen ambient on the metal-organic decomposed CeO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> films spin coated on an n-type GaN substrate. The compositions, structures, and morphologies of these samples are revealed by X-ray diffraction (XRD), field-emission scanning electron microscopy, and an atomic force microscope. XRD analysis discloses the presence of CeO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> films, α-Ce <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> , and an interfacial layer of β-Ga <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> . The formation of α-Ce <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> is due to the phase transformation of CeO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> , whereas the β-Ga <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> interfacial layer is formed due to the inward diffusion of the released oxygen from CeO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> reacting with decomposed GaN. These characterization results are then correlated with the metal-oxide-semiconductor characteristics of the CeO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> gate annealed at different temperatures. It has been demonstrated that oxide annealed at 1000°C shows the lowest semiconductor-oxide interface-trap density, effective oxide charge, and the highest dielectric breakdown field." @default.
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• W2017725825 date "2011-01-01" @default.
• W2017725825 modified "2023-10-14" @default.
• W2017725825 title "Effect of Postdeposition Annealing in Oxygen Ambient on Gallium-Nitride-Based MOS Capacitors With Cerium Oxide Gate" @default.
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• W2017725825 doi "https://doi.org/10.1109/ted.2010.2087024" @default.
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