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- W2017757911 abstract "Zn (3 nm)/Rh (100 nm) and oxidized Ag-ITO (100 nm)/Al (200 nm) schemes for the formation of low resistance and highly reflective ohmic contacts for flip-chip light emitting diodes were investigated. It is shown that annealing the samples at 430 and 530 °C for 1 min in air results in good ohmic behaviors with specific contact resistances of ∼10–5 Ωcm2 LEDs fabricated using the Zn/Rh contact layers give forward-bias voltages of 3.09–3.12 V at the injection current of 20 mA. Furthermore, the oxidized Ag-ITO film/Al contacts also show good ohmic characteristics with contact resistivity of 10–5 Ωcm2 when annealed at 330 °C for 5 min in vacuum. LEDs fabricated using the oxidized Ag-ITO film/Al contacts layers give forward-bias voltages of ∼3.40 V at 20 mA. It is clearly shown that a transparent contact interlayer is necessary to make high-quality ohmic contacts to p -type GaN for thermally stable flip-chip LEDs using Rh- and Al-reflectors. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)" @default.
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- W2017757911 date "2006-06-01" @default.
- W2017757911 modified "2023-10-16" @default.
- W2017757911 title "Low resistance and highly reflective ohmic contacts top -type GaN using transparent interlayers for flip-chip light emitting diodes" @default.
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- W2017757911 doi "https://doi.org/10.1002/pssc.200565377" @default.
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