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• W2017787810 abstract "The different precursors that have been tested or that are actually in use for the processing of thin films of nickel by the chemical vapor deposition technique are reviewed. Applications of thin films of nickel are presented. Deposition conditions and characteristics of the films obtained from different precursors are detailed. Ni(CO)4, NiCp2, Ni(MeCp)2, Ni(hfa)2, Ni(dmg)2, and Ni(den)2 appear as the most promising ones. The final choice of a precursor for the MOCVD of Ni films depends on requirements concerning the process (e.g. safety issues, deposition temperature, growth rate) and the purity of the deposited films. Dans cette mise au point, les différents précurseurs qui ont été testés on qui sont actuellement utilisés pour l'élaboration de couches minces de nickel par dépôt chimique en phase vapeur à partir de précurseurs métal-organiques (MOCVD) sont recensés. Des applications actuelles et potentielles des couches minces de nickel sont présentées. Les conditions opératoires et les caractéristiques des couches obtenues à partir de différents précurseurs sont détaillées. Ni(CO)4, NiCp2, Ni(MeCp)2, Ni(hfa)2, Ni(dmg)2, et Ni(den)2 apparaissent comme les précurseurs les plus intéressants. Il s'avère que le choix optimal d'un précurseur pour la MOCVD de couches minces de Ni dépend des impératifs concernant le procédé (sécurité d'opération, température de dépôt, vitesse de croissance) et la pureté des dépôts." @default.
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• W2017787810 date "2000-02-01" @default.
• W2017787810 modified "2023-10-03" @default.
• W2017787810 title "Precursors and operating conditions for the metal-organic chemical vapor deposition of nickel films" @default.
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• W2017787810 doi "https://doi.org/10.1016/s0151-9107(00)88716-4" @default.
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