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- W2017831258 abstract "A general equilibrium theory for the abrupt one-dimensional high-low junction at low temperature is presented and a numerical method described for generating profiles for the free-carrier and ionized impurity concentrations as well as the net space-charge distribution on both sides of the junction. For the specific case of Si: As at low temperatures with (low-side) doping of 1016 donors/cm3 and compensations in the range of 1012–1014 acceptors/cm3, order of magnitude perturbations from bulk equilibrium values are predicted on the low side at distances up to 50 μm from the junction interface. Effects due to temperature and compensation are described. Significant consequences for photoconductive properties are expected for sample lengths ⩽ 100 μm and are outlined briefly in terms of lifetime, gain-bias saturation and frequency response." @default.
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- W2017831258 date "1977-05-01" @default.
- W2017831258 modified "2023-09-26" @default.
- W2017831258 title "The theory of high-low junction contacts at low temperature with application to extrinsic silicon detectors" @default.
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- W2017831258 doi "https://doi.org/10.1016/0020-0891(77)90010-0" @default.
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