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- W2017881332 abstract "We have investigated characteristics of hexagonal- (α-) In1−xGaxN alloy films grown on Si(111) substrates with residual O impurities below 1% (estimated to be ∼ 0.5∼ 1%). The abnormally high incorporation efficiency of Ga atoms in In1−xGaxN under the III-family-rich condition was suppressed under an N-rich condition: the surface morphology became mirror-like morphology without In or/and Ga droplets on the surface and the Ga composition (x) was well-controlled as a linear function of Ga beam flux pressure under the condition. Although the band-gap energies of α-In1−xGaxN films agreed very well with the results of Y. Nanishi, Y. Saito and T. Yamaguchi [Japan. J. Appl. Phys. 42 (2003) 2549] in the high x-region of x≧0.7, they largely deflected from their data toward the higher energy side in the x-region of x<0.7. This large deflection is not explainable by phase separation, because phase separation becomes heavier particularly in the high x-region. We suspect the influence of residual O impurities at lower than 1% in the alloy films to be the cause of the large deflection." @default.
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- W2017881332 date "2004-10-01" @default.
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- W2017881332 title "ECR-assisted MBE growth of In1−xGaxN heteroepitaxial films on Si" @default.
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- W2017881332 doi "https://doi.org/10.1016/j.spmi.2004.09.012" @default.
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