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• W2017885082 abstract "We report on room-temperature negative transconductance (NTC) in axial Si/Ge hetero-nanowire tunneling field-effect transistors. The NTC produces a current peak-to-valley ratio &gt;45, a high value for a Si-based device. We characterize the NTC over a range of gate VG and drain VD voltages, finding that NTC persists down to VD = −50 mV. The physical mechanism responsible for the NTC is the VG-induced depletion in the p-Ge section that eventually reduces the maximum electric field that triggers the tunneling ID, as confirmed via three-dimensional (3D) technology computer-aided design simulations." @default.
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• W2017885082 date "2014-08-11" @default.
• W2017885082 modified "2023-10-18" @default.
• W2017885082 title "Strong room-temperature negative transconductance in an axial Si/Ge hetero-nanowire tunneling field-effect transistor" @default.
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• W2017885082 doi "https://doi.org/10.1063/1.4892950" @default.
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