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• W2017886466 abstract "The band offset of the (Zn,Cd)Se/ZnSe interface is determined from photoluminescence excitation spectroscopy performed on several (Zn,Cd)Se/ZnSe quantum wells at low temperature. Experimental results are compared with a calculation of the excitonic transition energies. The energy difference between the first heavy hole and light hole transitions E 1 H 1 and E 1 L 1 is found, in this case, to be sensitive to the strain-free relative valence band offset q v 0 . We find q v 0 = 13 ± 2%. The heavy hole excitons are type-I excitons whereas the light hole excitons are type-I excitons." @default.
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• W2017886466 date "1998-02-01" @default.
• W2017886466 modified "2023-10-18" @default.
• W2017886466 title "Band offset determination of the Zn1−xCdxSe/ZnSe interface" @default.
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• W2017886466 doi "https://doi.org/10.1016/s0022-0248(98)80175-9" @default.
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