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- W2017907098 abstract "A feasibility study of ArF excimer laser as a light source for subquarter micron design rule lithography is presented. Partially narrowed KLES-G1A ArF laser produces 57-pm (FWHM) bandwidth pulses with an average power of 5.1 W. Narrow-band operated KLES-G1A generated 7.2- pm (FWHM) pulses with 1.4 W. Further high output power with narrow-band spectrum was achieved by using injection-locking technique. The injection-locked ArF laser system generated 0.8-pm (FWHM) bandwidth pulses with an average power of 250 W. We also point out some problems appeared in the laser operation.© (1995) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only." @default.
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- W2017907098 date "1995-05-26" @default.
- W2017907098 modified "2023-09-23" @default.
- W2017907098 title "<title>Feasibility study of argon fluoride excimer laser for microlithography</title>" @default.
- W2017907098 doi "https://doi.org/10.1117/12.209315" @default.
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