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- W201797789 endingPage "V" @default.
- W201797789 startingPage "67" @default.
- W201797789 abstract "Impact-ionization processes in semiconductors are of great interest, both for the basic understanding of the electron-transport phenomena at high-electric-field strengths and for the correct design of semiconductor devices. This chapter reviews recent results concerning impact ionization in compound semiconductors and heterostructures and analyzes the effects of impact ionization on advanced microwave devices—such as metal semiconductor field effect transistors (MESFETs), high electron mobility transistors (HEMTs), and heterojunction bipolar transistors (HBTs). Characterization of impact-ionization effects in scaled devices have been carried out by several groups in various types of devices (MESFETs, HEMTs, and HBTs), with different active layer materials. The impact-ionization coefficients (per centimeter) are defined as the probability per unit distance along the direction of the electric field that a carrier impact-ionizes. The coefficients are usually identified as α and β for electrons and holes, respectively." @default.
- W201797789 created "2016-06-24" @default.
- W201797789 creator A5002653396 @default.
- W201797789 creator A5027748782 @default.
- W201797789 date "2001-01-01" @default.
- W201797789 modified "2023-09-25" @default.
- W201797789 title "Impact ionization in compound semiconductor devices" @default.
- W201797789 cites W1173427 @default.
- W201797789 cites W1543697150 @default.
- W201797789 cites W1556564093 @default.
- W201797789 cites W1568697123 @default.
- W201797789 cites W1612965329 @default.
- W201797789 cites W1633655229 @default.
- W201797789 cites W1649173893 @default.
- W201797789 cites W1963724535 @default.
- W201797789 cites W1965998988 @default.
- W201797789 cites W1967284630 @default.
- W201797789 cites W1968464260 @default.
- W201797789 cites W1969199934 @default.
- W201797789 cites W1970989422 @default.
- W201797789 cites W1971045881 @default.
- W201797789 cites W1972269684 @default.
- W201797789 cites W1972949191 @default.
- W201797789 cites W1974867694 @default.
- W201797789 cites W1975001866 @default.
- W201797789 cites W1975357795 @default.
- W201797789 cites W1976059610 @default.
- W201797789 cites W1979467272 @default.
- W201797789 cites W1980370100 @default.
- W201797789 cites W1981408152 @default.
- W201797789 cites W1981731564 @default.
- W201797789 cites W1981845822 @default.
- W201797789 cites W1982309186 @default.
- W201797789 cites W1983883919 @default.
- W201797789 cites W1985677175 @default.
- W201797789 cites W1985933569 @default.
- W201797789 cites W1987584664 @default.
- W201797789 cites W1987813333 @default.
- W201797789 cites W1988088859 @default.
- W201797789 cites W1988886755 @default.
- W201797789 cites W1989304087 @default.
- W201797789 cites W1989475362 @default.
- W201797789 cites W1989894508 @default.
- W201797789 cites W1990165581 @default.
- W201797789 cites W1992285714 @default.
- W201797789 cites W1995174031 @default.
- W201797789 cites W1996141646 @default.
- W201797789 cites W1996630297 @default.
- W201797789 cites W1997340478 @default.
- W201797789 cites W1999811638 @default.
- W201797789 cites W1999862436 @default.
- W201797789 cites W2000161937 @default.
- W201797789 cites W2000572743 @default.
- W201797789 cites W2000705886 @default.
- W201797789 cites W2000817879 @default.
- W201797789 cites W2002185174 @default.
- W201797789 cites W2002506879 @default.
- W201797789 cites W2003348051 @default.
- W201797789 cites W2004839057 @default.
- W201797789 cites W2005201573 @default.
- W201797789 cites W2006427961 @default.
- W201797789 cites W2008209552 @default.
- W201797789 cites W2008231617 @default.
- W201797789 cites W2009644542 @default.
- W201797789 cites W2010335409 @default.
- W201797789 cites W2011198448 @default.
- W201797789 cites W2012110502 @default.
- W201797789 cites W2013731590 @default.
- W201797789 cites W2014486344 @default.
- W201797789 cites W2014608561 @default.
- W201797789 cites W2015671383 @default.
- W201797789 cites W2019261104 @default.
- W201797789 cites W2021108495 @default.
- W201797789 cites W2022659385 @default.
- W201797789 cites W2023337289 @default.
- W201797789 cites W2025079253 @default.
- W201797789 cites W2025556545 @default.
- W201797789 cites W2025724045 @default.
- W201797789 cites W2026039974 @default.
- W201797789 cites W2027046023 @default.
- W201797789 cites W2030285341 @default.
- W201797789 cites W2032270828 @default.
- W201797789 cites W2032768977 @default.
- W201797789 cites W2033961376 @default.
- W201797789 cites W2036046029 @default.
- W201797789 cites W2036833379 @default.
- W201797789 cites W2038309827 @default.
- W201797789 cites W2038860413 @default.
- W201797789 cites W2038900424 @default.
- W201797789 cites W2039041198 @default.
- W201797789 cites W2039519637 @default.
- W201797789 cites W2041079374 @default.
- W201797789 cites W2041717569 @default.
- W201797789 cites W2043223968 @default.
- W201797789 cites W2043333184 @default.
- W201797789 cites W2046550728 @default.
- W201797789 cites W2047795021 @default.
- W201797789 cites W2047993948 @default.