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- W2017994669 abstract "In this study, enhanced light output power in GaN-based light-emitting diodes (LEDs) with a nanotextured indium tin oxide (ITO) transparent conductive layer was observed. Wafer-scale self-assembled cesium chloride nanospheres were formed on the ITO transparent conductive layer and served as the mask in a dry etching process. After the inductively coupled plasma (ICP) etching process, nanoscale islands were fabricated on the ITO layer. Compared with LEDs with a planar ITO layer, the light output power of LEDs with a nanotextured ITO layer was improved by 23.4%. Optoelectronic measurement showed that the performance of the fabricated LEDs was greatly enhanced." @default.
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- W2017994669 date "2012-01-30" @default.
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- W2017994669 title "Enhancement in the Light Output Power of GaN-Based Light-Emitting Diodes with Nanotextured Indium Tin Oxide Layer Using Self-Assembled Cesium Chloride Nanospheres" @default.
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- W2017994669 doi "https://doi.org/10.1143/jjap.51.020204" @default.
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