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• W2017999328 abstract "In this paper, 1-alkenes and 1-alkynes are investigated for a new class of monolayer resists formed on the hydrogen-terminated surfaces of both germanium and silicon. A series of 1-alkenes and 1-alkynes with different chain lengths are explored as deactivating agents for atomic layer deposition of HfO2 and Pt films. It is shown that to achieve satisfactory blocking of atomic layer deposition, densely packed, highly hydrophobic monolayers must be formed. A mechanism for the film formation and blocking processes is discussed and compared with that of alkylsilane-based self-assembled monolayer resists." @default.
• W2017999328 created "2016-06-24" @default.
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• W2017999328 date "2006-07-12" @default.
• W2017999328 modified "2023-10-09" @default.
• W2017999328 title "Highly Stable Monolayer Resists for Atomic Layer Deposition on Germanium and Silicon" @default.
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• W2017999328 doi "https://doi.org/10.1021/cm0607785" @default.
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