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- W2018013352 abstract "The temperature dependence of microwave properties—relaxation frequency and Henry factor—of undoped and p-type doped ten InAs∕GaAs quantum-dot layer lasers is reported in the 20–80°C range. It is shown that the linewidth enhancement factor of the p-type doped devices is temperature insensitive while that of the undoped lasers shows a strong dependence for temperatures above 40°C." @default.
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- W2018013352 date "2008-05-12" @default.
- W2018013352 modified "2023-09-26" @default.
- W2018013352 title "Temperature insensitive linewidth enhancement factor of p-type doped InAs∕GaAs quantum-dot lasers emitting at 1.3μm" @default.
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- W2018013352 doi "https://doi.org/10.1063/1.2929384" @default.
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