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- W2018021298 abstract "The multi-zone junction termination extension (MJTE) is a widely used edge termination technique for achieving high voltage SiC devices. It is commonly implemented with multiple lithography and implantation events. In order to reduce process complexity, cycle time, and cost, a single photolithography and single implant MJTE technique has been successfully developed. The method utilizes a pattern of finely graduated oxide windows that filter the implant dose and create a graded MJTE in a single implant and single photolithography step. Based on this technique, 6 kV / 0.09 cm2 PiN diodes were fabricated utilizing a 120-zone single-implant JTE design. This novel single-implant MJTE design captures 93% of the ideal breakdown voltage and has comparable performance and yield to a baseline three implant process." @default.
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- W2018021298 date "2012-05-01" @default.
- W2018021298 modified "2023-10-09" @default.
- W2018021298 title "Single Photolithography/Implantation 120-Zone Junction Termination Extension for High-Voltage SiC Devices" @default.
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- W2018021298 doi "https://doi.org/10.4028/www.scientific.net/msf.717-720.977" @default.
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