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- W2018049891 abstract "A description is given of the occurrence of fractional quantum Hall effects, and how these are influenced by the presence of disorder. It is shown that when electrons are photoexcited into a GaAs-GaAlAs heterojunction, the fractional state existing at a Landau level occupancy of 7/5 can dominate over that at 4/3. Activation energy measurements of the resistivity show how the energy gap of the fractional states is reduced by the presence of disorder. A new method of analysis of the resistivity minima is presented which is used to give information on the correlation length of the many body ground state." @default.
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- W2018049891 date "1987-01-01" @default.
- W2018049891 modified "2023-10-16" @default.
- W2018049891 title "Systematic Studies of the Fractional Quantum Hall Effect" @default.
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- W2018049891 doi "https://doi.org/10.1088/0031-8949/1987/t19a/012" @default.
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