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• W2018063973 abstract "The growth of InGaN/AlGaN multiple quantum wells (MQWs) structures is highly effective for realizing high quality semipolar (2021) active regions for green light emitting diodes (LEDs) and laser diodes (LDs). The use of AlGaN barriers significantly improved internal quantum efficiencies and the uniformity of the emission compared to InGaN or GaN barriers. 516 nm lasing wavelength was demonstrated on semipolar (2021) GaN substrates by introducing three periods InGaN/AlGaN MQWs and the AlGaN-cladding-free optical waveguide consisting of GaN cladding and InGaN guiding layers." @default.
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• W2018063973 date "2010-07-16" @default.
• W2018063973 modified "2023-10-16" @default.
• W2018063973 title "High Quality InGaN/AlGaN Multiple Quantum Wells for Semipolar InGaN Green Laser Diodes" @default.
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• W2018063973 doi "https://doi.org/10.1143/apex.3.082001" @default.
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