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• W2018068498 abstract "Two series of N- and Ga-face GaN Van Hoof structures were grown by plasma-assisted molecular beam epitaxy to study the surface potential barrier by contactless electroreflectance (CER). A clear CER resonance followed by strong Franz-Keldysh oscillation of period varying with the thickness of undoped GaN layer was observed for these structures. This period was much shorter for N-polar structures that means smaller surface potential barrier in these structures than in Ga-polar structures. From the analysis of built-in electric field it was determined that the Fermi-level is located 0.27 ± 0.05 and 0.60 ± 0.05 eV below the conduction band for N- and Ga-face GaN surface, respectively." @default.
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• W2018068498 date "2013-07-29" @default.
• W2018068498 modified "2023-09-24" @default.
• W2018068498 title "Contactless electroreflectance studies of surface potential barrier for N- and Ga-face epilayers grown by molecular beam epitaxy" @default.
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• W2018068498 doi "https://doi.org/10.1063/1.4817296" @default.
• W2018068498 hasPublicationYear "2013" @default.
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