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- W2018076529 abstract "In this work, we investigate the effect of performing a high dose 20 keV He+ implant before the implantation of B at low energy (3 keV) in silicon and the subsequent thermal annealing at 800 °C. The implants were performed in laterally confined regions defined by opening windows in a SiO2 mask, in order to evidence the impact on a realistic configuration used in device fabrication. High resolution quantitative scanning capacitance microscopy (SCM) combined with cross-section transmission electron microscopy (XTEM) allowed to clarify the role of the voids distribution produced during the thermal annealing on the diffusion and electrical activation of implanted B in Si. Particular evidence was given to the effect of the uniform nanovoids distribution, which forms in the region between the surface and the buried cavity layer." @default.
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- W2018076529 date "2005-12-01" @default.
- W2018076529 modified "2023-10-18" @default.
- W2018076529 title "Effect of Self-Interstitials – Nanovoids Interaction on Two-Dimensional Diffusion and Activation of Implanted B in Si" @default.
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- W2018076529 doi "https://doi.org/10.4028/www.scientific.net/ssp.108-109.395" @default.
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