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- W2018086022 abstract "We have fabricated, characterized and compared the performance of lateral enhancement-mode GaN MOSFETs on as-grown and RIE-etched surfaces with 900 and 1000°C gate oxide annealing temperatures. Both subthreshold swing and field effect mobility show 1000°C is the optimal annealing temperature for the PECVD gate oxide in our MOSFET process." @default.
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- W2018086022 date "2009-03-01" @default.
- W2018086022 modified "2023-09-26" @default.
- W2018086022 title "PERFORMANCE OF MOSFETs ON REACTIVE-ION-ETCHED GaN SURFACES" @default.
- W2018086022 cites W2067455090 @default.
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- W2018086022 doi "https://doi.org/10.1142/s0129156409006163" @default.
- W2018086022 hasPublicationYear "2009" @default.
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