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- W2018092129 abstract "A method for fabricating self-assembled InGaAs quantum dashes on a nominal GaAs(001) substrate is presented. InGaAs layers were grown on nominal GaAs(001) substrates at a low temperature to suppress the Stranski-Krastanov transition as well as indium segregation and indium desorption, then annealed at high temperatures to induce self-assembly. While typical direct growth at the annealing temperature has yielded only quantum dot shapes, our approach has enabled us to control the shape of self-assembled nanostructures from quantum dashes to quantum dots and eventually quantum dot-chains. The major factor controlling the shape of InGaAs nanostructures was found to be the thickness of the pseudomorphic In(0.4)Ga(0.6)As layer." @default.
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- W2018092129 date "2008-10-30" @default.
- W2018092129 modified "2023-09-27" @default.
- W2018092129 title "Shape control of InGaAs nanostructures on nominal GaAs(001): dashes and dots" @default.
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- W2018092129 doi "https://doi.org/10.1088/0957-4484/19/47/475601" @default.
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