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- W2018140167 abstract "Abstract β-FeSi2 layers produced by Ion Beam Assisted Deposition (IBAD) of iron on (100) silicon substrates were implanted with cobalt ions. The phase formation in the ternary system FeCoSi is studied in the as-implanted state as well as after different annealing treatments. Optimum conditions are investigated for the formation of the ternary silicide β-(Fe1−xCox)Si2 in order to tune the band gap by changing the Co concentration, using RBS, AES combined with sputter depth profiling, XRD, IR absorption and reflection, and resistivity measurements. Increasing the cobalt dose results in an increasing amount of CoSi and FeSi in the as-implanted state for implantation temperatures ≤ 250°C. The partial amorphization observed for RT implantation enhances the probability of incorporation of cobalt into the ternary silicide. Implantation at 400°C causes an almost complete formation of β-(CoxFe1−x)Si2. The monosilicide in the low temperature samples is dissolved by post-implantation annealing at 800°C. For implantation at 250°C, annealing at 800°C results in a sizeable fraction of CoSi2. A homogeneous depth distribution of cobalt is only obtained after annealing at 900°C. Because of the decrease of the β → α transition temperature with increasing cobalt content, at 900°C the α phase is formed for the highest cobalt concentration. After a final retransformation annealing (800°C/48 h + 750°C/48 h) a shift of the band gap energy from 0.89 eV to 0.73 eV is measured for β-(Fe0.85Co0.15)Si2." @default.
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- W2018140167 date "1997-05-01" @default.
- W2018140167 modified "2023-09-28" @default.
- W2018140167 title "Formation of ternary (Fe1 − xCox)Si2 structures by ion beam assisted deposition and ion implantation" @default.
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- W2018140167 doi "https://doi.org/10.1016/s0168-583x(97)00126-2" @default.
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