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- W2018169682 abstract "Using an atomistic pseudopotential approach, we study how the shape of the dot (spherical vs lens shaped) affects the position-dependent strain and the electronic properties of tensile $(mathrm{In}mathrm{As}∕mathrm{In}mathrm{Sb})$ and compressive $(mathrm{In}mathrm{As}∕mathrm{Ga}mathrm{As})$ quantum dots. We compare the strain profiles, strained modified band offsets, confined levels, and atomistic wave functions of these dots. We show (i) how the existence of position-dependent strain in nonflat heterostructures can control the electronic properties, leading, for example, to interfacial localization of hole states on the interface of matrix-embedded dots and (ii) how the dots shape can control the level sequence and degeneracy. For example in spherical dots, one finds degenerate light-hole (LH) and heavy-hole (HH) states, whereas in lens-shaped dots one can have as the highest-occupied hole state either (a) a LH state inside the dot, becoming a HH state outside the dot $(mathrm{In}mathrm{As}∕mathrm{In}mathrm{Sb}$ tensile case) or (b) a HH state inside the dot, becoming a LH states outside the dot ($mathrm{In}mathrm{As}∕mathrm{Ga}mathrm{As}$ compressive case)." @default.
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- W2018169682 date "2004-12-15" @default.
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- W2018169682 title "Strain-induced interfacial hole localization in self-assembled quantum dots: Compressive<mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML display=inline><mml:mrow><mml:mi mathvariant=normal>In</mml:mi><mml:mi mathvariant=normal>As</mml:mi><mml:mo>∕</mml:mo><mml:mi mathvariant=normal>Ga</mml:mi><mml:mi mathvariant=normal>As</mml:mi></mml:mrow></mml:math>versus tensile<mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML display=inline><mml:mrow><mml:mi mathvariant=normal>…" @default.
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- W2018169682 doi "https://doi.org/10.1103/physrevb.70.235316" @default.
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