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• W2018184532 abstract "In this work, we prepared zinc sulfide thin films on glass substrates by ammonia-free chemical bath deposition method using thioacetamide as the sulfide source and Ethylene Diamine Tetra Acetic Acid disodium salt as the complexing agent in a solution of pH = 6.0. Thin films of ZnS with different thicknesses of 18–450 nm were prepared. The effect of film thickness and annealing temperature in atmospheric air, on optical properties, band gap energy and grain size of nanocrystals were studied. The X-ray diffraction analysis showed a cubic zinc blend structure and a diameter of about 2–5 nm for ZnS nanocrystals. The Fourier Transform Infrared spectrum of films revealed no peaks due to impurities. The as-deposited ZnS films had more than 70% transmittance in the visible region. The direct band gap of as-deposited films ranged from 3.68 to 3.78 eV and those of annealed films varied from 3.60 to 3.70 eV." @default.
• W2018184532 created "2016-06-24" @default.
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• W2018184532 date "2008-06-01" @default.
• W2018184532 modified "2023-09-30" @default.
• W2018184532 title "Ammonia-free chemical bath deposition of nanocrystalline ZnS thin film buffer layer for solar cells" @default.
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• W2018184532 doi "https://doi.org/10.1016/j.tsf.2007.09.051" @default.
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