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- W2018188221 abstract "We report on the crystal structures, magnetic and magnetotransport properties of epitaxial (Ga1−xMnx)N films with low Mn concentration (x=0.06–0.5%) grown by plasma-enhanced molecular beam epitaxy, exhibiting n-type conductivity and ferromagnetism with Curie temperature in the range 550–700 K. Transmission electron microscopy studies revealed that Mn ions substitute for Ga ions in the epitaxial structure, leading to the expansion of the lattice parameter a of the hexagonal (wurtzite) structure. The temperature dependence of the sheet resistance is found to show negative magnetoresistance in the temperature range 4–300 K, indicative of ferromagnetic semiconducting (Ga,Mn)N films." @default.
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- W2018188221 date "2002-09-01" @default.
- W2018188221 modified "2023-10-16" @default.
- W2018188221 title "Room temperature ferromagnetic (Ga,Mn)N epitaxial films with low Mn concentration grown by plasma-enhanced molecular beam epitaxy" @default.
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- W2018188221 doi "https://doi.org/10.1016/s0038-1098(02)00471-4" @default.
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