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- W2018195479 abstract "Abstract The quaternary compound, Al x Ga y In 1 − x − y As ( x + y = 0.47−8) lattice-matched to InP substrates was realized as a buffer layer in an InP-based lattice-matched high electron mobility transistors. The band gap energy of this quaternary compound buffer layer was linearly decreased from E g = 1.54 eV for Al 0.48 Ga y =0 In 0.52 As to E g = 0.82 eV for Al x =0 Ga 0.47 In 0.53 As by varying Al and Ga mole fraction simultaneously. A self-consistent analysis revealed, one, that this buffer layer modified the quantum-well structure into a triangular-shaped conduction-band profile and, two, the disappearance of the quantum-well in valance-band profile. By forming a triangular-shaped conduction-band quantumwell, carrier wave functions drifted farther apart from the heterointerface, leading to the reduction of ionized impurity scattering. Disappearance of holes in a valance band also contributed to the reduction of the hole and electron recombination scattering. A high electron mobility of 11 338 cm 2 /V s with two-dimensional electron gas density of 2.5 × 10 12 /cm 2 was achieved at room temperature. The high electron mobility was believed to have resulted from the modified triangular-shape quantum well in which the ionized impurity ion scattering was suppressed. We believe that we have achieved the highest room temperature value of electron mobility time with two-dimensional electron gas concentration that was 2.83 × 10 16 /cm 2 to date for InP-based lattice-matched high electron mobility transistors system. PL measurement showed some evidences of a high-quality epitaxial growth." @default.
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- W2018195479 title "Molecular beam epitaxy growth of InP-based lattice-matched high electron mobility transistor structures having a modified quantum-well profile due to AlxGayIn1 − x − yAs(x + y = 0.47−8) buffer layer" @default.
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- W2018195479 doi "https://doi.org/10.1016/s0022-0248(96)00897-4" @default.
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