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- W2018201764 abstract "Defect spatial distributions of extremely low concentration were measured, for the first time, by a transient capacitance technique in ion-implanted MOSFET’s. Aluminum gate FET’s were ion implanted through the gate oxide with 1×1012 of 28Si+ ions/cm2 at 310 keV. The devices were annealed at 650 °C before Al was put down. Energy levels for the residual defects after annealing were obtained at Ec−0.29, Ec−0.45, Ec−0.54, and Ev+0.52 eV, respectively. Then the in-depth distribution for each level was measured to a concentration of 1012/cm3 by varying the gate voltage. The profile of defect distribution shows that the annealing after low-dose implantation differs from the regrowth of the amorphous layer caused by heavy implantation and that most of the residual defects remain in the bulk rather than at the interface." @default.
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- W2018201764 title "Defect spatial distributions in annealed ion-implanted silicon measured by a transient capacitance technique" @default.
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- W2018201764 doi "https://doi.org/10.1063/1.88931" @default.
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