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• W2018221486 abstract "The effects of nitrogen (N) incorporation on the electron properties of GaInNAs epilayers grown by metal-organic vapor phase epitaxy (MOVPE) have been probed by the analysis of Hall-effect and persistent photoconductivity (PPC) measurement. From the analysis of temperature-dependent PPC decay kinetics of samples with different N content, we speculate that the effect of PPC in n-type GaInNAs can be ascribed to DX-type deep centers and N-induced defects undergoing large lattice relaxation upon photo-excitation. With further experimental supports to our interpretation, we have also observed that N-induced localization can be quenched through thermal annealing with different temperatures." @default.
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• W2018221486 date "2006-04-01" @default.
• W2018221486 modified "2023-10-18" @default.
• W2018221486 title "Effects of nitrogen incorporation on the electronic properties of GaxIn1−xNyAs1−y epilayers probed by persistent photoconductivity" @default.
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• W2018221486 doi "https://doi.org/10.1016/j.jcrysgro.2005.12.078" @default.
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