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• W2018240177 abstract "Polycrystalline Dy thin films, coated with a very thin Pd layer, have been deposited on glass substrates by electron beam evaporation and subsequently hydrided. For hydrogen partial pressures larger than 0.7 kPa, a semiconductor character is displayed in the optical properties of the DyH2 + x thin films. A parametric model is applied to follow the evolution with hydrogen pressure of various parameters characterizing the absorption by the semiconductor DyH2 + x thin films. The contribution of the free electrons to the absorption of light is also considered within a Drude model incorporating the presence of the hydrogen atoms as ionized impurity scattering centers." @default.
• W2018240177 created "2016-06-24" @default.
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• W2018240177 date "2007-07-01" @default.
• W2018240177 modified "2023-10-01" @default.
• W2018240177 title "Semiconductor behavior of hydrided Dy thin films as a function of increasing hydrogen pressure" @default.
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• W2018240177 doi "https://doi.org/10.1016/j.tsf.2007.04.030" @default.
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