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- W2018278001 abstract "One of the key issues for the realization of ZnO-based enzyme modified field effect transistors (FET) is growth of a high resistive layer underneath the active layer of the device structure. For that purpose, nitrogen-doped ZnO (ZnO:N) and ZnMgO layers were grown on a-plane sapphire substrates by molecular beam epitaxy (MBE). Although photoluminescence (PL) spectra indicated that nitrogen atom was incorporated as acceptor, ZnO:N layers showed still n-type conductivity probably due to generation of donor-like defects during nitrogen doping. On the other hand, ZnMgO layers showed high resistive and flat surface, which will be utilized underlying layers for successive growth of ZnO-based biosensors." @default.
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- W2018278001 date "2004-06-01" @default.
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- W2018278001 title "High resistive layers toward ZnO-based enzyme modified field effect transistor" @default.
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- W2018278001 doi "https://doi.org/10.1016/j.snb.2003.12.022" @default.
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