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• W2018297736 abstract "Our developed noise simulator can represent the dynamic behaviors of electron and hole trapping and de-trapping via interactions with both the Si substrate and the poly-Si gate. Simulations reveal that the conventional analytical model using the ratio between the capture and emission time constants yields large errors in the estimates of trap site positions due to interactions with the Si substrate and poly-Si gate especially in thin gate insulator MOSFETs." @default.
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• W2018297736 date "2015-03-19" @default.
• W2018297736 modified "2023-09-26" @default.
• W2018297736 title "Comprehensive studies on the accuracy of trap characterization by using advanced random telegraph noise simulator" @default.
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• W2018297736 doi "https://doi.org/10.7567/jjap.54.04dc14" @default.
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