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• W2018305750 abstract "We present a kinetic model showing why self-induced GaN nanowires synthesized by molecular beam epitaxy obey the scaling growth laws. Our model explains the scaling behavior from kinetic considerations of the step flow radial growth and the shadow effect. The nanowire length L and radius R scale with time as [1+C(t-t0)]α/(α+1) and [1+C(t-t0)]1/(α+1), respectively. Consequently, the length scales with the radius as L∝Rα. The power index α equals 2.46 in our conditions. This scaling behavior is paramount for understanding the self-induced growth of nanowires in general as well as for tuning their morphology to the desired properties." @default.
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• W2018305750 date "2012-04-09" @default.
• W2018305750 modified "2023-10-14" @default.
• W2018305750 title "Scaling growth kinetics of self-induced GaN nanowires" @default.
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• W2018305750 doi "https://doi.org/10.1063/1.3701591" @default.
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