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- W2018334462 abstract "We report the growth and characterization of a Si-doped, n-type AlGaN layer with 45% Al composition. For the application of n-type AlGaN layers with high Al composition in ultraviolet emitters, we fabricated an n-Al<sub>0.45</sub>Ga<sub>0.55</sub>N layer with high crystalline quality and high electrical conductivity by inserting Al<sub>0.85</sub>Ga<sub>0.15</sub>N/AlN superlattices (SLs) to prevent cracks prior to growing the n-type AlGaN layer. The dislocation density in the n-AlGaN layer with 45% Al composition and SLs was less than 2.4 x 10<sup>10</sup> cm<sup>-2</sup>, which was lower than the dislocation density of 5.3 x 10<sup>10</sup> cm<sup>-2</sup> for the n-AlGaN layer without SLs. The resistivity, mobility, and free electron concentration in the n-type Al<sub>0.45</sub>Ga<sub>0.55</sub>N layer with SLs were 2.2 x 10<sup>-2</sup> Ω×cm, 55.0 cm<sup>2</sup> /V-s, and 5.0 x 10<sup>18</sup> cm<sup>-3</sup> at room temperature, respectively." @default.
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- W2018334462 date "2014-02-27" @default.
- W2018334462 modified "2023-09-23" @default.
- W2018334462 title "Microscope investigation and electrical conductivity of Si-doped n-type Al0.45Ga0.55N layer grown on AlGaN/AlN superlattices" @default.
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- W2018334462 doi "https://doi.org/10.1117/12.2041398" @default.
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