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- W2018363019 abstract "Vertical silicon nanowire (SiNW) resonators are designed and fabricated in order to assess exposure to aerosolnanoparticles (NPs). To realize SiNW arrays, nanolithography and inductively coupled plasma (ICP) deep reactive ionetching (DRIE) at cryogenic temperature are utilized in a top-down fabrication of SiNW arrays which have high aspectratios (i.e., up to 34). For nanolithography process, a resist film thickness of 350 nm is applied in a vacuum contact modeto serve as a mask. A pattern including various diameters and distances for creating pillars is used (i.e., 400 nm up to5 μm). In dry etching process, the etch rate is set high of 1.5 μm/min to avoid underetching. The etch profiles of Si wirescan be controlled aiming to have either perpendicularly, negatively or positively profiled sidewalls by adjusting theetching parameters (e.g., temperature and oxygen content). Moreover, to further miniaturize the wire, multiple sacrificialthermal oxidations and subsequent oxide stripping are used yielding SiNW arrays of 650 nm in diameter and 40 μm inlength. In the resonant frequency test, a piezoelectric shear actuator is integrated with the SiNWs inside a scanningelectron microscope (SEM) chamber. The observation of the SiNW deflections are performed and viewed from thetopside of the SiNWs to reduce the measurement redundancy. Having a high deflection of ~10 μm during its resonantfrequency of 452 kHz and a low mass of 31 pg, the proposed SiNW is potential for assisting the development of aportable aerosol resonant sensor." @default.
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- W2018363019 date "2013-05-17" @default.
- W2018363019 modified "2023-09-23" @default.
- W2018363019 title "Fabrication of vertical nanowire resonators for aerosol exposure assessment" @default.
- W2018363019 doi "https://doi.org/10.1117/12.2016932" @default.
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