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- W2018403727 abstract "A new metal structure consisting of AuZnNi/Ti/Au has been proposed for forming low-resistance ohmic contacts to p -GaAs with a fine-pattern definition. The dependency of the contact resistance on the Ti-layer thickness indicated that an optimum amount of Ti is requred for reducing the contact resistance. A minimun contact resistance (0.3 Ω·mm) was obtained with 150-nm thick Ti attached to Be-implanted p -GaAs at a dose of 6×10 13 cm -3 ." @default.
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- W2018403727 modified "2023-09-26" @default.
- W2018403727 title "Low-Resistance Ohmic Contacts to p-GaAs" @default.
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- W2018403727 doi "https://doi.org/10.1143/jjap.25.1268" @default.
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