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- W2018440382 abstract "We describe the operation of single electron transistors with a double-gate geometry defined by Ga focused ion beam implanted in-plane gates and line Schottky gates. The in-plane gates are used to squeeze the channel and to increase the charging energy. The Schottky gates are placed on the channel to form the tunnel junctions. Independent control of these gates is useful to define the geometry of single electron transistors. We found strong resonances exhibiting negative differential resistance in the small devices, which is attributed to tunneling through zero-dimensional states when the barrier has a parabolic-shaped potential." @default.
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- W2018440382 title "Resonant tunneling properties of single electron transistors with a novel double‐gate geometry" @default.
- W2018440382 doi "https://doi.org/10.1063/1.116388" @default.
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