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• W2018443880 abstract "HfSiON gate dielectric with equivalent oxide thickness of 10Å was prepared by reactive sputtering. It exhibits good physical and electrical characteristics, including good thermal stability up to 900°C, high dielectric constant and low gate leakage current. It was integrated with TaN metal gate in a novel gate-last process flow to fabricate NMOSFET. In the process, poly-silicon was deposited on HfSiON gate dielectric as dummy gate and replaced by TaN metal gate after source/drain formation. Because of the metal gate formation after the ion-implant doping activation at high temperature, HfSiON/TaN NMOSFET with good driving ability and excellent sub-threshold characteristics was fabricated." @default.
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• W2018443880 date "2013-06-01" @default.
• W2018443880 modified "2023-09-25" @default.
• W2018443880 title "High-quality HfSiON gate dielectric and its application in a gate-last NMOSFET fabrication" @default.
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• W2018443880 doi "https://doi.org/10.1109/edssc.2013.6628205" @default.
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