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- W2018486064 abstract "We investigated the atomistic mechanism of N incorporation during SiC oxidation by the first principles calculation. We found that N atoms play two characteristic roles in NO oxidation of SiC surface. One is that N atoms tend to form three-fold coordinated covalent bonds on a SiC(0001) surface, which assist the termination of surface dangling bonds, leading to improve the interface properties. The other is that N atoms form N-N bond like a double bond. The N2 molecule is desorbed from SiC surface, which do not disturb the oxidation process of SiC surfaces. These results indicate that N incorporation is effective to suppress defect state generation at SiO2/SiC interfaces during SiC oxidation." @default.
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- W2018486064 date "2013-01-01" @default.
- W2018486064 modified "2023-09-26" @default.
- W2018486064 title "Theoretical Study of N Incorporation Effect during SiC Oxidation" @default.
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- W2018486064 doi "https://doi.org/10.4028/www.scientific.net/msf.740-742.455" @default.
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