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- W2018499662 abstract "The magnetic susceptibility of charge carriers in impurity sites of a semiconductor is calculated in this paper. According to the impurity content two cases can be distinguished. For sufficiently low impurity concentration, the interaction between the impurity centers can be neglected and the paramagnetic contribution of the trapped carriers to the susceptibility is of the Langevin type, i.e., inversely proportional to the temperature. The onset of interaction at higher concentrations, however, causes the impurity level associated with isolated impurities to broaden into a quasi-continuous energy band. The electrons or holes in such a band are free to move through the crystal and thus, forming a Fermi gas, give rise to a Pauli paramagnetism which at low temperatures is practically constant. In both cases the orbital diamagnetism is essentially the same and independent of temperature.The susceptibilities corresponding to the two cases are compared with one another and it is found that low-temperature susceptibility data should give valuable information on impurity bands. Measurements on Si are interpreted according to the present theory." @default.
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- W2018499662 date "1955-12-15" @default.
- W2018499662 modified "2023-09-26" @default.
- W2018499662 title "Magnetic Susceptibility of Impurity-Trapped Electrons and Holes in Semiconductors" @default.
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- W2018499662 doi "https://doi.org/10.1103/physrev.100.1589" @default.
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