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• W2018504658 abstract "Aluminum induced crystallization of amorphous SiGe at low temperature is studied and a dual-phase stacked structure with different compositions emerges when the annealing temperature is higher than a critical value. This behavior is very sensitive to the oxidization state of the interlayer. A model based on energetics is proposed to elucidate this temperature dependent behavior. Thermodynamically, it can be ascribed to the competition between grain-boundary-mediated and interface-mediated crystallization and kinetically, it stems from the different diffusion rates of Si and Ge. The results are useful to the design and fabrication of high-efficiency solar cells." @default.
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• W2018504658 date "2012-02-13" @default.
• W2018504658 modified "2023-10-15" @default.
• W2018504658 title "Diffusion-controlled formation mechanism of dual-phase structure during Al induced crystallization of SiGe" @default.
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• W2018504658 doi "https://doi.org/10.1063/1.3685712" @default.
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