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• W2018520945 abstract "The impact of utilizing silicon oxide (SiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> ) strain layer on NPN-SiGe-HBT device's electrical properties and frequency response has been studied using TCAD modeling. Simulations based on hydrodynamic (HD) model have been carried out to clarify the impact of utilizing SiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> strain layer in the collector region on the device performance. Simulation results show that NPN-SiGe-HBT device employing SiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> strain layer in the collector region exhibit better high frequency characteristics in comparison with an equivalent conventional HBT device. An approximately, 14% of improvement in f <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>T</sub> , and 9% of improvement in f <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>MAX</sub> have been achieved. Despite the very small decrease in the break down voltage (BV <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>CE0</sub> ) value (~1%), the f <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>T</sub> ×BV <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>CE0</sub> product enhancement is about 12% by means of strain engineering." @default.
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• W2018520945 date "2010-10-01" @default.
• W2018520945 modified "2023-10-17" @default.
• W2018520945 title "Modeling of a novel NPN-SiGe-HBT device structure using strain engineering technology in the collector region for enhanced electrical performance" @default.
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• W2018520945 doi "https://doi.org/10.1109/bipol.2010.5668019" @default.
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