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- W2018561451 abstract "► The surface inversion of p-GaN films was successfully achieved by H 2 treatment at high temperatures. ► The shifts in the surface Fermi level due to the H 2 treatment were identified by XPS measurement. ► The linear I-V behavior of the H 2 -treated p-GaN films is due to the high V N density pinned the surface Fermi level close to the conduction-band edge. ► The surface inversion by means of H 2 treatment can play an important role in lowering the metal contact resistance to p-GaN films. This study investigated the effects of hydrogen (H 2 ) treatment on metal contacts to Mg-doped p-GaN films by Hall-effect measurement, current–voltage ( I – V ) analyzer and X-ray photoemission spectra (XPS). The interfacial oxide layer on the p-GaN surface was found to be the main reason for causing the nonlinear I – V behavior of the untreated p-GaN films. The increased nitrogen vacancy (V N ) density due to increased GaN decomposition rate at high-temperature hydrogen treatment is believed to form high density surface states on the surface of p-GaN films. Compared to untreated p-GaN films, the surface Fermi level determined by the Ga 2p core-level peak on 1000 °C H 2 -treated p-GaN films lies about ∼2.1 eV closer to the conduction band edge (i.e., the surface inverted to n-type behavior). The reduction in barrier height due to the high surface state density pinned the surface Fermi level close to the conduction band edge, and allowed the electrons to easily flow over the barrier from the metal into the p-GaN films. Thus, a good ohmic contact was achieved on the p-GaN films by the surface inversion method." @default.
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- W2018561451 date "2011-06-01" @default.
- W2018561451 modified "2023-10-18" @default.
- W2018561451 title "Effects of hydrogen treatment on ohmic contacts to p-type GaN films" @default.
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- W2018561451 doi "https://doi.org/10.1016/j.apsusc.2011.03.061" @default.
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