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- W2018563546 abstract "Measurements of carrier recombination rates using a time-resolved pump-probe technique are reported for mid-wave infrared InAs/InAs1−xSbx type-2 superlattices (T2SLs). By engineering the layer widths and alloy compositions, a 16 K band-gap of ≃235 ± 10 meV was achieved for all five unintentionally doped T2SLs. Carrier lifetimes were determined by fitting a rate equation model to the density dependent data. Minority carrier lifetimes as long as 10 μs were measured. On the other hand, the Auger rates for all the InAs/InAsSb T2SLs were significantly larger than those previously measured for InAs/GaSb T2SLs. The minority carrier and Auger lifetimes were observed to generally increase with increasing antimony content and decreasing layer thickness." @default.
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- W2018563546 date "2014-07-14" @default.
- W2018563546 modified "2023-09-22" @default.
- W2018563546 title "Effects of layer thickness and alloy composition on carrier lifetimes in mid-wave infrared InAs/InAsSb superlattices" @default.
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- W2018563546 doi "https://doi.org/10.1063/1.4890578" @default.
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