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• W2018571008 abstract "It has been demonstrated that we can use interrupted growth mode in metalorganic chemical vapor deposition (MOCVD) to fabricate nanoscale InGaN self-assembed quantum dots (QDs). With a 12-s growth interruption, we successfully formed InGaN QDs with a typical lateral size of 25 nm and an average height of 4.1 nm. The QDs density is about 2×1010 cm−2. In contrast, much larger InGaN QDs were obtained without growth interruption. Compared with samples prepared without growth interrupt, a much larger photoluminescence (PL) intensity and a large 67 meV PL blue shift was observed from samples prepared with growth interrupt. These results suggest such a growth interrupt method is potentially useful in nitride-based optoelectronic devices grown by MOCVD." @default.
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• W2018571008 date "2003-02-01" @default.
• W2018571008 modified "2023-10-18" @default.
• W2018571008 title "Growth of nanoscale InGaN self-assembled quantum dots" @default.
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• W2018571008 doi "https://doi.org/10.1016/s0022-0248(02)02130-9" @default.
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