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- W2018576737 abstract "Room-temperature integrated photoluminescence of Si-implanted n-type and semi-insulating wafers of single-crystal InP has been investigated as a technique for characterizing the quality of ion-implanted and annealed material. It was found that the intensity of the luminescence is a good indicator of the quality of the annealed samples. Using both rapid thermal annealing and conventional furnace annealing, not only was it possible to monitor the progressive activation of the implanted impurities, but we were also able to characterize the degradation occurring in the InP crystal due to the thermal exposure and to compare the results using different methods of surface protection. Combined with progressive wet etching of the implanted layers, it was also possible to use the photoluminescence response to spatially profile the activation and the degradation of the wafers. The results suggest that annealing, in general, is not able to restore the quality of the original unimplanted semiconductor and that even short transient anneal cycles can lead to detectable thermally induced material degradation, which extends many micrometers into the InP." @default.
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- W2018576737 date "1989-10-15" @default.
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- W2018576737 title "Photoluminescence studies of Si‐implanted InP" @default.
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- W2018576737 doi "https://doi.org/10.1063/1.344036" @default.
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